SiC-Based p⁺ nn⁺ Diode for Picosecond Semiconductor Closing Switch

We study a SiC-based diode with a p⁺ nn⁺ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode. By two-dimensional mixed device-circuit simulations, we demonstrate a single device reliably operated at 4 kV and at risetime 11 ps with high output dV/dt=276 kV/ns, which is in good agreement with the experimental results.