Single Cell Element of Chalcogenide Random Access Memory Fabricated with the Focused Ion Beam Method

A single cell element of chalcogenide random access memory was fabricated by using the focused ion beam method. The contact size between the Ge₂Sb₂Te₅ phase change film and the top electrode film is about 600nm (diameter) and the contact area is calculated to be 0.28μm². The thickness of the phase change film is 83nm. The current--voltage characteristics of the cell element are studied using the home-made current--voltage tester in our laboratory. The minimum threshold current of about 0.6mA is obtained.