Ultrafast Photoelectric Effects in Heterojunctions of La0.7Sr0.3MnO3 and Si
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Abstract
Ultrafast photoelectric effects have been observed in p--n heterojunctions of La0.7Sr0.3MnO3(LSMO)/Si and LSMO/SrTiO3-/Si for the first time. The rise time was about 1 ns and the full width at half maximum was about 2 ns for the photovoltaic pulse when the heterojunction was irradiated by a laser of ～25 ps pulse duration and 1064 nm wavelength. The photovoltaic sensitivity was as large as 435 mV/mJ for a 1064 nm laser pulse. No such pulse was observed with irradiation from a pulsed 10.6 μm CO2 laser.
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References
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