Fabrication of Pentacene Thin-Film Transistors with Patterned Polyimide Photoresist as Gate Dielectrics and Research of Their Degradation

Pentacene organic thin-film transistors using commercial photoresist as gate dielectrics were fabricated. The photoresist was spin-coated and directly patterned by photolithography. As a result, the fabrication processes were greatly reduced. With the characteristics of the transistors measured, the degradation of the transistors was investigated. In the search for the factors causing degradation, a transistor using poly(methyl methacrylate) as the gate dielectric was also fabricated. It is regarded that the degradation is caused by the changes at the interface between photoresist and pentacene film.