Dependence of Structure and Haemocompatibility of Amorphous Carbon Films on Substrate Bias Voltage
-
Abstract
Tetrahedral amorphous hydrogenated carbon (ta-C:H) films on Si(100) substrates were prepared by using a magnetic-field-filter plasma stream deposition system. Samples with different ratios of sp3-bond to sp2-bond were obtained by changing the bias voltage applied to the substrates. The ellipsometric spectra of various carbon films in the photon energy range of 1.9--5.4eV were measured. The refractive index n and the relative sp3 C ratio of these films were obtained by simulating their ellipsometric spectra using the Forouhi--Bloomer model and by using the Bruggeman effective medium approximation, respectively. The haemocompatibility of these ta-C:H films was analysed by observation of platelet adhesion and measurement of kinetic clotting time. The results show that the sp3 C fraction is dependent on the substrate bias voltage, and the haemocompatibility is dependent on the ratio of sp3-bond to sp2-bond. A good haemocompatibility material of ta-C:H films with a suitable sp3 C fraction can be prepared by changing the substrate bias voltage.
Article Text
-
-
-
About This Article
Cite this article:
GUO Yang-Ming, MO Dang, LI Zhe-Yi, LIU Yi, HE Zhen-Hui, CHEN Di-Hu. Dependence of Structure and Haemocompatibility of Amorphous Carbon Films on Substrate Bias Voltage[J]. Chin. Phys. Lett., 2004, 21(11): 2132-2135.
GUO Yang-Ming, MO Dang, LI Zhe-Yi, LIU Yi, HE Zhen-Hui, CHEN Di-Hu. Dependence of Structure and Haemocompatibility of Amorphous Carbon Films on Substrate Bias Voltage[J]. Chin. Phys. Lett., 2004, 21(11): 2132-2135.
|
GUO Yang-Ming, MO Dang, LI Zhe-Yi, LIU Yi, HE Zhen-Hui, CHEN Di-Hu. Dependence of Structure and Haemocompatibility of Amorphous Carbon Films on Substrate Bias Voltage[J]. Chin. Phys. Lett., 2004, 21(11): 2132-2135.
GUO Yang-Ming, MO Dang, LI Zhe-Yi, LIU Yi, HE Zhen-Hui, CHEN Di-Hu. Dependence of Structure and Haemocompatibility of Amorphous Carbon Films on Substrate Bias Voltage[J]. Chin. Phys. Lett., 2004, 21(11): 2132-2135.
|