Preparation and Characterization of GaN Nanowires
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Abstract
GaN Nanowires were prepared by the post-nitridation technique. The morphology and structure of GaN nanowires are investigated by transmission electron microscopy and scanning electron microscopy. A strong blue photoluminescence is observed for room-temperature measurement, which attributes to electron transition from DX center to valence band.
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XUE Cheng-Shan, YANG Ying-Ge, MA Hong-Lei, ZHUANG Hui-Zhao, MA Jin. Preparation and Characterization of GaN Nanowires[J]. Chin. Phys. Lett., 2003, 20(4): 568-570.
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XUE Cheng-Shan, YANG Ying-Ge, MA Hong-Lei, ZHUANG Hui-Zhao, MA Jin. Preparation and Characterization of GaN Nanowires[J]. Chin. Phys. Lett., 2003, 20(4): 568-570.
|
XUE Cheng-Shan, YANG Ying-Ge, MA Hong-Lei, ZHUANG Hui-Zhao, MA Jin. Preparation and Characterization of GaN Nanowires[J]. Chin. Phys. Lett., 2003, 20(4): 568-570.
|
XUE Cheng-Shan, YANG Ying-Ge, MA Hong-Lei, ZHUANG Hui-Zhao, MA Jin. Preparation and Characterization of GaN Nanowires[J]. Chin. Phys. Lett., 2003, 20(4): 568-570.
|
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