Direct, etching of GaAs Crystal Excited by a Vacuum Ultraviolet Lamp
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Abstract
A successful direct, etching system excited by a vacuum ultraviolet hollow cathode lamp is reported. The result shows that the facility can transfer a mesh pattern exactly and directly to n-type GaAs wafer, which is the same as that direct etched by synchrotron radiation.
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HAN Zheng-Fu, LIAO Yan-Lin, ZHOU Hong-Jun, JIANG Zuo-Hong, ZHANG Guo-Bin, CAO Zhuo-Liang. Direct, etching of GaAs Crystal Excited by a Vacuum Ultraviolet Lamp[J]. Chin. Phys. Lett., 2003, 20(2): 308-310.
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HAN Zheng-Fu, LIAO Yan-Lin, ZHOU Hong-Jun, JIANG Zuo-Hong, ZHANG Guo-Bin, CAO Zhuo-Liang. Direct, etching of GaAs Crystal Excited by a Vacuum Ultraviolet Lamp[J]. Chin. Phys. Lett., 2003, 20(2): 308-310.
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HAN Zheng-Fu, LIAO Yan-Lin, ZHOU Hong-Jun, JIANG Zuo-Hong, ZHANG Guo-Bin, CAO Zhuo-Liang. Direct, etching of GaAs Crystal Excited by a Vacuum Ultraviolet Lamp[J]. Chin. Phys. Lett., 2003, 20(2): 308-310.
|
HAN Zheng-Fu, LIAO Yan-Lin, ZHOU Hong-Jun, JIANG Zuo-Hong, ZHANG Guo-Bin, CAO Zhuo-Liang. Direct, etching of GaAs Crystal Excited by a Vacuum Ultraviolet Lamp[J]. Chin. Phys. Lett., 2003, 20(2): 308-310.
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