Effects of Proton Irradiation on a CMOS Image Sensor

We perform 9MeV proton irradiation of a complementary metal oxide semiconductor (CMOS) image sensor at doses from 1×10⁹ to 4×10¹⁰ cm^-2. In general, the average brightness of dark output images increases with an increasing dose, and reaches the maximum at 1×10¹⁰ cm ^-2. The captured
colour images become very blurry at 4×10¹⁰ cm^-2. These can be explained by change of concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation programme with dose.