Theoretical Study of Photoabsorption Spectra near Si 2p Edges of Silanes: to Determine Orientations of Adsorbed Silanes

In the frame work of quantum defect theory, photoabsorption spectra near
Si 2p edges of silane have been studied. When silanes are adsorbed on a physical surface and excited by polarized x-ray photons, relative intensities of the spectra will be different from that of free molecules. Such features can be used to determine orientations of adsorbed silanes based on selection rules.