Photoinduced Resistance Change in an Oxygen-Deficient La _0.9 Sr _0.1 MnO _3-δ Thin Film

Photoinduced resistance change (△R/R) in an oxygen-deficient La_0.9Sr_0.1MnO_3-δ thin film is studied. At room temperature, the resistance change of about 30% and response time of about 75ns are observed under the illumination with a 532nm laser pulse of 7ns and light power of 750mW. It is also found that △R/R changes with the light power. The phenomena are explained in terms of the photoinduced hole carriers and localized insulator-to-metal transition, which may have potential applications in optoelectronic
devices.