Light-Induced Domain Inversion in Mg-Doped near Stoichiometric Lithium Niobate Crystals

  • Received Date: November 15, 2006
  • Published Date: May 31, 2007
  • We investigate the influence of visible light on domain inversion in Mg-doped near stoichiometric lithium niobate crystals and find that the switching electric field decreases about 70% above a threshold light intensity. This effect helps us optically control domain switching and produce bulk domain structures on the micrometre scale. Finally, we introduce a model of photo-induced carriers to explain the origin of the reduction of switching electric field.
  • Article Text

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