X-Ray Photoelectron Spectroscopy and Reflection High Energy Electron Diffraction of Epitaxial Growth SiC on Si(100) Using C₆₀ and Si

The formation of silicon carbide upon deposition of C₆₀ and Si on Si(100) surface at 850°C is studied via x-ray photoelectron spectroscopy and reflection high energy electron diffraction (RHEED). The C 1s, O 1s and Si 2p core-level spectra and the RHEED patterns indicate the formation of 3C--SiC