Vacancy Aggregation in Diamond Films grown in CH4+H2 Atmosphere by MPCVD
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Abstract
Transmission electron microscopy is applied to study the diamond film grown in a CH4 and H2 gaseous mixture by microwave plasma assisted chemical vapour deposition. Defects in the nanometre scale, dislocation loops, are
first observed in diamond films. The dislocation loops are found to be of co-existence with planar defects and are next to the planar defects for 111 faceting grains. A possible mechanism is suggested to interpret the co-existence of dislocation loops with planar defects.
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LIU Yan-Yan, ZHANG Qing-Yu, Elizabeth BAUER-GROSSE. Vacancy Aggregation in Diamond Films grown in CH4+H2 Atmosphere by MPCVD[J]. Chin. Phys. Lett., 2007, 24(12): 3502-3505.
LIU Yan-Yan, ZHANG Qing-Yu, Elizabeth BAUER-GROSSE. Vacancy Aggregation in Diamond Films grown in CH4+H2 Atmosphere by MPCVD[J]. Chin. Phys. Lett., 2007, 24(12): 3502-3505.
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LIU Yan-Yan, ZHANG Qing-Yu, Elizabeth BAUER-GROSSE. Vacancy Aggregation in Diamond Films grown in CH4+H2 Atmosphere by MPCVD[J]. Chin. Phys. Lett., 2007, 24(12): 3502-3505.
LIU Yan-Yan, ZHANG Qing-Yu, Elizabeth BAUER-GROSSE. Vacancy Aggregation in Diamond Films grown in CH4+H2 Atmosphere by MPCVD[J]. Chin. Phys. Lett., 2007, 24(12): 3502-3505.
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