Negativity in the Extended Hubbard Model under External Magnetic Field

  • Received Date: July 26, 2007
  • Published Date: December 31, 2007
  • We exactly calculate the negativity, a measurement of entanglement, in the two-site extended Hubbard model with external magnetic field. Its behaviour at different temperatures is presented. The negativity reduces with the increasing temperature or with the increasing uniform external magnetic field. It is also found that a non-uniform external magnetic field can be used to
    modulate or to increase the negativity.
  • Article Text

  • [1] Einstein A, Podolsky B and Rozen N 1935 Phys. Rev. 47 777
    [2] Schrodinger E 1935 Naturwiss. 23 807
    [3] Bell J S 1964 Physics 1 195
    [4] Bennett C H and Divincenzo D P 2000 Nature 407247
    [5] Nielson M A and Chuang I L 2000 Quantum Computationand Quantum Information (Cambridge: Cambridge University Press)
    [6] Sachdev S 1999 Quantum Phase Transitions (Cambridge:Cambridge University Press)
    [7] Nielsen M A, Ph. D. thesis, University of New Mexico, 1998 e-print arXiv: quant-ph/0011036
    [8] Gunlycke D, Kendon V M and Vedral V 2001 Phys. Rev.A 64 042302
    [9] Arnesen M C, Bose S and Vedral V 2001 Phys. Rev.Lett. 87 017901
    [10] Osterloh A, Amico Luigi, Falci G and Rosario F 2002 Nature 416 608
    [11] Anteneodo C and Souza A M C 2003 J. Opt. B : QuantumSemiclass. Opt. 5 73
    [12] Wang X G 2001 Phys. Rev. A 64 012313 Wang X G 2001 Phys. Lett. A 281 101
    [13] Gu S J, Lin H Q and Li Y Q 2003 Phys. Rev. A 68 042330 Gu S J, Tian G S and Lin H Q 2005 Phys. Rev. A 71052322
    [14] Gu S J, Deng S S, Li Y Q and Lin H Q 2004 Phys. Rev.Lett. 93 086402
    [15] Anfossi A, Giorda P, Montorsi A and F. Traversa 2005 Phys. Rev. Lett. 95 056402
    [16] Buonsante P and Vezzani A 2007 Phys. Rev. Lett. 98 110601
    [17] Sun Y, Chen Y G and Chen H 2003 Phys. Rev. A 68 044301
    [18] Deng S S and Gu S J 2005 Chin. Phys. Lett. 22804
    [19] Zhang G F and Li S S 2006 Eur. Phys. J. D 37123
    [20] Zhang F L , Liang M L, Zhang J H 2007 OpticsCommunications 275 268
    [21] Lin H Q, Campbell D C and Clay R T 2000 Chin. J.Phys. 38 1
    [22] Hill S, Edwards R S, Aliaga-Alcalde N and Christou G 2003 Science 302 1015
    [23] Peres A 1996 Phys. Rev. Lett. 77 1413 Horodecki M, Horodecki P and Horodecki R 1996 Phys.Lett. A 233 1
    [24] Hill S and Wotters W K 1997 Phys. Rev. Lett. 78 5022 Wootters W K 1998 Phys. Rev. Lett. 80 2245
    [25] Vidal G and Werner R F 2002 Phys. Rev. A 65032314
    [26] Groisman B, Popescu S and Winter A Preprint arXiv:quant-ph/0410091
  • Related Articles

    [1]FAN Zhi-Qiang, ZHANG Zhen-Hua, QIU Ming, DENG Xiao-Qing, TANG Gui-Ping. Controllable Negative Differential Resistance Behavior of an Azobenzene Molecular Device Induced by Different Molecule-Electrode Distances [J]. Chin. Phys. Lett., 2012, 29(7): 077305. doi: 10.1088/0256-307X/29/7/077305
    [2]REN Hua, LIANG Wei, ZHAO Peng, LIU De-Sheng. Low Bias Negative Differential Resistance with Large Peak-to-Valley Ratio in a BDC60 Junction [J]. Chin. Phys. Lett., 2012, 29(7): 077301. doi: 10.1088/0256-307X/29/7/077301
    [3]FANG Dong-Kai, WU Shao-Quan, ZOU Cheng-Yi, ZHAO Guo-Ping. Effect of Electronic Correlations on Magnetotransport through a Parallel Double Quantum Dot [J]. Chin. Phys. Lett., 2012, 29(3): 037303. doi: 10.1088/0256-307X/29/3/037303
    [4]YIN Hai-Tao, LÜ Tian-Quan, LIU Xiao-Jie, XUE Hui-Jie. Spin Accumulation in a Double Quantum Dot Aharonov-Bohm Interferometer [J]. Chin. Phys. Lett., 2009, 26(4): 047302. doi: 10.1088/0256-307X/26/4/047302
    [5]YANG Yuan, LI Gui-Ping, GAO Yong, LIU Jing. Characteristics Analysis of Vertical Double Gate Strained Channel Heterostructure Metal-Oxide-Semiconductor-Field-Effect-Transistor [J]. Chin. Phys. Lett., 2009, 26(2): 027801. doi: 10.1088/0256-307X/26/2/027801
    [6]CHENG Jian-Bing, ZHANG Bo, DUAN Bao-Xing, LI Zhao-Ji. A Novel Super-Junction Lateral Double-Diffused Metal--Oxide--Semiconductor Field Effect Transistor with n-Type Step Doping Buffer Layer [J]. Chin. Phys. Lett., 2008, 25(1): 262-265.
    [7]YANG Fu-Bin, WU Shao-Quan, SUN Wei-Li. Spin-Polarized Transport through the T-Shaped Double Quantum Dots with Fano--Kondo Interaction [J]. Chin. Phys. Lett., 2007, 24(7): 2056-2059.
    [8]HE Jin, BIAN Wei, TAO Ya-Dong, LIU Feng, SONG Yan, ZHANG Xing. Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor [J]. Chin. Phys. Lett., 2006, 23(12): 3373-3375.
    [9]LI Xian-Jie, YAN Fa-Wang, ZHANG Wen-Jun, ZHANG Rong-Gui, LIU Wei-Ji, AO Jin-Ping, ZENG Qing-Ming, LIU Shi-Yong, LIANG Chun-Guang. Field Effect Transistor with Self-Organized In0.15Ga0.85As/GaAs Quantum Wires as a Channel Grown on (553)B GaAs Substrates [J]. Chin. Phys. Lett., 2001, 18(8): 1147-1149.
    [10]LIU Bo, ZHANG Guang-cai, DAI Jian-hua, ZHANG Hong-jun. Eigenvalues and Eigenfunctions of a Stadium-Shaped Quantum Dot Subjected to a Perpendicular Magnetic Field [J]. Chin. Phys. Lett., 1998, 15(9): 628-630.

Catalog

    Article views (3) PDF downloads (753) Cited by()

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return