Temperature-Dependent Electron Transport in In_0.5Ga_0.5P/GaAs Grown by MOVPE

Hall effect measurements in undoped In_0.5Ga_0.5P/GaAs alloy grown by metal organic vapour-phase epitaxy (MOVPE) have been carried out in the temperature range 15--350K. The experimental results are analysed using a two-band model including conduction band transport calculated using an iterative solution of the Boltzmann equation. A good agreement was obtained between theory and experiment. The impurity contents of In_0.5Ga_0.5P/GaAs alloy, such as donor density N_D, acceptor density N_A and donor activation
energy ε_D, were also determined.