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GaN MOS-HEMT Using Ultra-Thin Al2O3 Dielectric Grown by Atomic Layer Deposition

  • Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071

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  • Received Date: March 19, 2007
  • Published Date: July 31, 2007
    Abstract
  • We report a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with atomic layer deposited (ALD) Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 (2005) 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device
    fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of 100mS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0V. The gate leakage is two orders of magnitude lower than that of the conventional AlGaN/GaN HEMT.
    The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.
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    • References (15)
  • [1] Ye P D, Yang B, Ng K K, Bude J, Wilk G D, Halder S and Hwang J C M2005 Appl. Phys. Lett. 86 063501
    [2] Maeda N, Saitoh T, Tsubaki K, Nishida T and Kobayashi N 1999 Jpn. J. Appl. Phys. 38 987
    [3] Khan M A, Shur M S, Chen Q C and Kuznia J N 1994 Electron. Lett. 30 2175
    [4] Binari S C, Rowland L B, Kelner G, Kruppa W, Dietrich H B,Doverspike K and Gaskill D K 1995 International Symposium CompoundSemiconductors () p 459
    [5] Ren F, Hong M, Chu S N G, Marcus M A, Schurman M J, Baca A, PeartonS J and Abernathy C R 1998 Appl. Phys. Lett. 73 3893
    [6] Khan M A, Hu X, Sumin G, Lunev A, Yang J, Gaska R and Shur M S 2000 IEEE Electron. Device Lett. 21 63
    [7] Khan M A, Hu X, Tarakji A, Simin G, Yang J, Gaska R and Shur M S2000 Appl. Phys. Lett. 77 1339
    [8] Simon G, Hu X, Ilinskaya N, Kumar A, Koudymov A, Zhang J, Khan M A,Gaska R and Shur M S 2000 Electron. Lett. 36 2043
    [9] Koudymov A, Hu X, Simin K, Simin G, M Ali, Yang J and Khan M A 2002 IEEE Electron. Device Lett. 23 449
    [10] Simin G, Koudymov A, Fatima H, Zhang J, Yang J, Khan M A, Hu X,Tarakji A, Gaska R and Shur M S 2002 IEEE Electron. Device Lett. 23 458
    [11] Simon G, X Hu, Ilinskaya N, Zhang J, Tarakji A, Kumar A, Yang J,Khan M A, Gaska R and Shur M S 2001 IEEE Electron. Device Lett. 22 53
    [12] Hu X, Koudymov A, G Simon, Yang J, Khan M A, Tarakji A, Shur M Sand Gaska R 2001 Appl. Phys. Lett. 79 2832
    [13] Hashizume T, Ootomo S and Hasegawa H 2003 Appl. Phys. Lett. 83 2952
    [14] Mehandru R, Luo B, Kim J, Ren F, Gila B P, Onstine A H, AbernathyC R, Pearton S J, Gotthold D, Birkhahn R, Peres B, Fitch R, GillespieJ, Jenkins T, Sewell J, Via D and Crespo A 2003 Appl. Phys. Lett. 82 2530
    [15] Hao Z B, Guo T Y, Zhang L C and Luo Y 2006 Chin. Phys. Lett. 23 497
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