Electrical Characterization of Copper Phthalocyanine Thin-Film Transistors with Fluoride Gate Insulator

Different fluoride materials are used as gate dielectrics to fabricate copper phthalocyanine (CuPc) thin film transistors (OTFTs). The fabricated devices exhibit good electrical characteristics and the mobility is found to be dependent on the gate voltage from 10^-3 to 10^-1cm²V^-1s^-1. The observed noticeable electron injection at the drain electrode is of great significance in
achieving ambipolar OTFTs. The same method for formation of organic
semiconductors and gate dielectric films greatly simplifies the fabrication process. This provides a convenient way to produce high-performance OTFTs on a large scale and should be useful for integration in organic displays.