Microstructure and Optical Properties of AgxO Prepared by Direct-Current Magnetron-Sputtering Method
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Abstract
Two series of AgxO films are prepared on glass substrates by dc magnetron-sputtering method at room temperature and 90°C under different oxygen to argon gas ratio (OAR) conditions. The microstructure is investigated by XRD and SEM in order to obtain the information on the component evolution of
AgO+Ag2O to Ag2O. Its optical properties are investigated by reflectance and absorption spectroscopy to extract the information on metallic and dielectric behaviour evolution of Ag2O, AgO and silver particles and the interband transition. The results indicate that the AgxO film prepared at room temperature is mainly made up of AgO and Ag2O clusters while Ag2O is the primary component of AgxO prepared at 90°C. The AgxO film mainly consisting of the primary component shows indirect interband transition
structure occurring at 2.89eV. Combination of increasing OAR and substrate temperature is an effective method to lower the threshold of thermal decomposition temperature of AgxO and to deal with the bottleneck of short-wavelength optical and magneto-optical storage.
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GAO Xiao-Yong, LIU Xu-Wei, WANG Song-You, LIU Yu-Fen, LIN Qing-Geng, LU Jing-Xiao. Microstructure and Optical Properties of AgxO Prepared by Direct-Current Magnetron-Sputtering Method[J]. Chin. Phys. Lett., 2008, 25(4): 1449-1452.
GAO Xiao-Yong, LIU Xu-Wei, WANG Song-You, LIU Yu-Fen, LIN Qing-Geng, LU Jing-Xiao. Microstructure and Optical Properties of AgxO Prepared by Direct-Current Magnetron-Sputtering Method[J]. Chin. Phys. Lett., 2008, 25(4): 1449-1452.
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GAO Xiao-Yong, LIU Xu-Wei, WANG Song-You, LIU Yu-Fen, LIN Qing-Geng, LU Jing-Xiao. Microstructure and Optical Properties of AgxO Prepared by Direct-Current Magnetron-Sputtering Method[J]. Chin. Phys. Lett., 2008, 25(4): 1449-1452.
GAO Xiao-Yong, LIU Xu-Wei, WANG Song-You, LIU Yu-Fen, LIN Qing-Geng, LU Jing-Xiao. Microstructure and Optical Properties of AgxO Prepared by Direct-Current Magnetron-Sputtering Method[J]. Chin. Phys. Lett., 2008, 25(4): 1449-1452.
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