Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient

By means of low-temperature (10K) Fourier transform infrared absorption spectroscopy, the kinetics of nitrogen indiffusion in Czochralski (CZ) silicon annealed at 1150--1250°C in nitrogen ambient is investigated. Moreover, the nitrogen diffusivities in CZ silicon at elevated temperatures deduced herein are in good agreement with those previously obtained in float-zone silicon, thus leading to the conclusion that the nitrogen indiffusion in CZ silicon at elevated temperatures is via nitrogen pairs.