THE STRUCTURAL CHANGE OF Mo/GaAs INTERFACE AFTER ANNEALING
-
Abstract
The interface contact of Mo/GaAs has been investigated by THREM and electron diffraction. It was found that a Mo3Ga structure was produced at the interfacial region after 500°C annealing due to the solid reaction.
Article Text
-
-
-
About This Article
Cite this article:
ZHANG Shuyuan, WU Ziqin. THE STRUCTURAL CHANGE OF Mo/GaAs INTERFACE AFTER ANNEALING[J]. Chin. Phys. Lett., 1986, 3(12): 549-552.
|
ZHANG Shuyuan, WU Ziqin. THE STRUCTURAL CHANGE OF Mo/GaAs INTERFACE AFTER ANNEALING[J]. Chin. Phys. Lett., 1986, 3(12): 549-552.
|
ZHANG Shuyuan, WU Ziqin. THE STRUCTURAL CHANGE OF Mo/GaAs INTERFACE AFTER ANNEALING[J]. Chin. Phys. Lett., 1986, 3(12): 549-552.
|
ZHANG Shuyuan, WU Ziqin. THE STRUCTURAL CHANGE OF Mo/GaAs INTERFACE AFTER ANNEALING[J]. Chin. Phys. Lett., 1986, 3(12): 549-552.
|
DownLoad: