DEPENDENCE OF THE ENERGY LEVELS RELATED TO TITANIUM IN SILICON ON ELECTRIC FIELD

DLTS and DDLTS measurements show that impurity Ti in Si is associated with two electron energy levels E_c-.0.22eV, E_c-0.54eV, and one hole energy level E_v+0.29eV. The “thermal activation energy” of these two electron energy levels decreases with the increase of the electric fieid, 5ut that of the hole energy level is independent on electric field. It suggests that these three energy levels should be associated with donor centers.