Metal-Organic Chemical Vapor Deposition Growth of GaAs.AIAs Double Barrier Resonant Tunneling Diode

We have growth two structures of AIAs/GaAs/AIAs double barrier resonant tunneling diodes by metal-organic chemical vapor deposition. The resonances to the first excited states were obtained, the measured peak-to-valley current ratio is 1.3 at 77K, room temperature peak current is 8kA/cm², the resonance voltages are in agreement with the theoretical approach by transfer-matrix method.