ELLIPSOMETRIC SPECTRA AND DAMAGE PROFILES OF ION IMPLANTED SILICON

By means of optimization with a multilayer model, the damage profile can be obtained from the measured data by spectroscopic ellipsometry without stripping. The damage profiles of 40keV As⁺ implanted Si at doses of 4 x 10¹³ and 1. 4 x 10¹⁴ ions cm^-2 are shown and compared with those determined by Rutherford backscattering.