Passivating Studies on a P₂S₅/NH₄OH-treated GaAs Surface Using Photoluminescence

We demonstrated that the photoluminescence intensity and its contrast obtained on liquid encapsulated Czochralski GaAs depend on the surface recombination and they are controlled by chemical surface treatments. We have successfully passivated the surface of GaAs wafer on the basis of P₂S₅/NH₄OH treatment.