Schottky Barrier Heights of Cr Contacts on n- and p-Type 6H-SiC

The Schottky contact characteristics of Cr on n- and p-type 6H-SiC have been investigated by using I-V and C-V methods, and the barrier heights and ideality factors have been measured. Results obtained show that Cr is also an appropriate metal to form Schottky junction on n type 6H-SiC, as the barrier height of ~ 1 eV is moderate for both low forward turn on voltage and low backward leakage current in device applications. However, the interfacial properties of Cr to p type 6H-SiC results in nonideal Schottky junctions.