ELECTRONIC STRUCTURES AND THE PROPERTIES OF HYDROGEN IN SILICON
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Abstract
The electronic structures of hydrogen in silicon are treated theoretically in a Si-H bond unit representation using the approximation of solid state matrix elements. it -is found that some unusual properties in c-Si are caused by the changes of the electronic state of hydrogen in silicon when Si-H bonds dissolve at certain temperature.
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CUI Shufan, MAI Zhenhong. ELECTRONIC STRUCTURES AND THE PROPERTIES OF HYDROGEN IN SILICON[J]. Chin. Phys. Lett., 1986, 3(12): 561-564.
CUI Shufan, MAI Zhenhong. ELECTRONIC STRUCTURES AND THE PROPERTIES OF HYDROGEN IN SILICON[J]. Chin. Phys. Lett., 1986, 3(12): 561-564.
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CUI Shufan, MAI Zhenhong. ELECTRONIC STRUCTURES AND THE PROPERTIES OF HYDROGEN IN SILICON[J]. Chin. Phys. Lett., 1986, 3(12): 561-564.
CUI Shufan, MAI Zhenhong. ELECTRONIC STRUCTURES AND THE PROPERTIES OF HYDROGEN IN SILICON[J]. Chin. Phys. Lett., 1986, 3(12): 561-564.
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