Intraband Relaxation and Its Influences on Quantum Dot Lasers
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Abstract
A comprehensive two-level numerical model is developed to describe carrier distribution in a quantum-dot laser. Light-emission spectra with different intraband relaxation rates (2ps, 7.5ps and 20ps) are calculated and analysed to investigate the influence of relaxation rates on performance of the quantum-dot laser. The results indicate that fast intraband relaxation favours not only the ground state single mode operation but also the higher injection efficiency.
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DENG Sheng-Ling, HUANG Yong-Zhen, YU Li-Juan. Intraband Relaxation and Its Influences on Quantum Dot Lasers[J]. Chin. Phys. Lett., 2005, 22(8): 2077-2080.
DENG Sheng-Ling, HUANG Yong-Zhen, YU Li-Juan. Intraband Relaxation and Its Influences on Quantum Dot Lasers[J]. Chin. Phys. Lett., 2005, 22(8): 2077-2080.
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DENG Sheng-Ling, HUANG Yong-Zhen, YU Li-Juan. Intraband Relaxation and Its Influences on Quantum Dot Lasers[J]. Chin. Phys. Lett., 2005, 22(8): 2077-2080.
DENG Sheng-Ling, HUANG Yong-Zhen, YU Li-Juan. Intraband Relaxation and Its Influences on Quantum Dot Lasers[J]. Chin. Phys. Lett., 2005, 22(8): 2077-2080.
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