Temperature-Dependent Galvanomagnetic Measurements on Doped InSb and InAs Grown by Liquid Encapsulated Czochralski

Resistivity, magnetoresistivity and Hall effect measurements in n-type Te-doped InSb and S-doped InAs samples grown by the liquid encapsulated Czochralski technique were carried out as a function of temperature (14-350K) and magnetic field (0-1.35T). In Te-doped InSb, an impurity level with energy E₁ = 3meV and the activation energy E₀= 0.26eV, which is the band gap energy, are obtained from the resistivity and Hall carrier concentration analysis. In S-doped InAs, both the linear and power law models are used in explaining the temperature-dependent resistivity. The effects of impurities on the electron and magnetic transportation properties of InAs and InSb have also been discussed.