Characterization of High-Energy-Heavy-Ion-Induced Defects in GaAs by Positron Annihilation
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Abstract
The defects induced by 64 MeV 19F ion irradiation to a Auence of 4.3 ×1016/cm2 are investigated in GaAs by positron annihilation lifetime technique. Di-vacancies are created by the irradiation. The formation of tri- and quadri-vacancies is observed during thermal annealing. The di-, tri-and quadri-vacancies are annealed away at 350, 550 and 800°C, respectively.
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ZHU Sheng-yun, LUO Qi, FAN Zhi-guo, WANG Chun-rui, ZHENG Sheng-nan, GOU Zhen-hui, LI An-li, QIAN Jia-yu. Characterization of High-Energy-Heavy-Ion-Induced Defects in GaAs by Positron Annihilation[J]. Chin. Phys. Lett., 1997, 14(7): 535-537.
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ZHU Sheng-yun, LUO Qi, FAN Zhi-guo, WANG Chun-rui, ZHENG Sheng-nan, GOU Zhen-hui, LI An-li, QIAN Jia-yu. Characterization of High-Energy-Heavy-Ion-Induced Defects in GaAs by Positron Annihilation[J]. Chin. Phys. Lett., 1997, 14(7): 535-537.
|
ZHU Sheng-yun, LUO Qi, FAN Zhi-guo, WANG Chun-rui, ZHENG Sheng-nan, GOU Zhen-hui, LI An-li, QIAN Jia-yu. Characterization of High-Energy-Heavy-Ion-Induced Defects in GaAs by Positron Annihilation[J]. Chin. Phys. Lett., 1997, 14(7): 535-537.
|
ZHU Sheng-yun, LUO Qi, FAN Zhi-guo, WANG Chun-rui, ZHENG Sheng-nan, GOU Zhen-hui, LI An-li, QIAN Jia-yu. Characterization of High-Energy-Heavy-Ion-Induced Defects in GaAs by Positron Annihilation[J]. Chin. Phys. Lett., 1997, 14(7): 535-537.
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