Metalorganic Chemical Vapor Deposition of GaAs on Si Substrate Prepared by Room Temperature Chemical Cleaning Treatment

A new method for metalorganic chemical vapor deposition (MOCVD) of GaAs on Si substrates is developed. Instead of the usual high temperature surface cleaning treatment for Si substrate, the new method uses room temperature HF vapor polishing in the preparation chamber in the MOCVD system as the first step of the growth. Single crystal GaAs layers with mirror-like surfaces were obtained.