Effect of Nitrogen and Hydrogen on the Crystallization of Nanocrystalline Silicon Nitrogen Films

Hydrogenated nanocrystalline silicon nitrogen (nc-SiN_x:H) films were prepared by rf glow discharge of gas mixture of silane (SiH₄) and nitrogen (N₂) diluted heavily by hydrogen (H₂). The effect of the gas volume ratios Xg of (SiU₄ +N₂)/H₂ and X_N) of N₂/SiH₄ on the crystallization and composition of films is described. The growth process and crystallization mechanism of nc-SiN_x:H films are discussed in detail.