Self-Starting Passively Mode-Locking All-Solid-State Laser with GaAs Absorber Grown at Low Temperature
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Abstract
We realize a stable self-starting passively mode-locking all-solid-state laser by using novel GaAs mirrors as the absorber and output coupler. The GaAs mirror is grown by the technology of metal organic chemical vapour deposition at low temperature. With such an absorber as the output coupler in the laser resonator, laser pulses with duration of 42ps were generated at a repetition rate of 400MHz, corresponding to the average power of 590mW.
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JIA Yu-Lei, LING Wei-Jun, WEI Zhi-Yi, WANG Yong-Gang, MA Xiao-Yu. Self-Starting Passively Mode-Locking All-Solid-State Laser with GaAs Absorber Grown at Low Temperature[J]. Chin. Phys. Lett., 2005, 22(10): 2575-2577.
JIA Yu-Lei, LING Wei-Jun, WEI Zhi-Yi, WANG Yong-Gang, MA Xiao-Yu. Self-Starting Passively Mode-Locking All-Solid-State Laser with GaAs Absorber Grown at Low Temperature[J]. Chin. Phys. Lett., 2005, 22(10): 2575-2577.
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JIA Yu-Lei, LING Wei-Jun, WEI Zhi-Yi, WANG Yong-Gang, MA Xiao-Yu. Self-Starting Passively Mode-Locking All-Solid-State Laser with GaAs Absorber Grown at Low Temperature[J]. Chin. Phys. Lett., 2005, 22(10): 2575-2577.
JIA Yu-Lei, LING Wei-Jun, WEI Zhi-Yi, WANG Yong-Gang, MA Xiao-Yu. Self-Starting Passively Mode-Locking All-Solid-State Laser with GaAs Absorber Grown at Low Temperature[J]. Chin. Phys. Lett., 2005, 22(10): 2575-2577.
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