Quantitative Mobility Spectrum Analysis for Determination of Electron and Magneto Transport Properties of Te-Doped GaSb

Resistivity, magnetoresistivity and Hall effect measurements in n-type Te-doped GaSb grown by the liquid encapsuled Czochralsk technique are carried out as functions of temperature (35--350K) and magnetic field (0--1.35T). The power law model is used to explain the temperature-dependent resistivity. The magnetic-field-dependent data are analysed using the quantitative mobility spectrum analysis technique. The effect of individual band parameters (n_L, n_Γ, μ_L, μ_Γ, p and μ_p) on both the electron and magneto transports have been discussed. The E_L-E_G energy separation between the L and Γ conduction band edges is also derived.