Growth and Characterization of Cu₂O Films Made by Rapid Thermal Oxidation Technique

Cu₂O thin films with (111) preferred orientation have been grown on glass and Cu substrates by rapid thermal oxidation of Cu at 500°C for 45s. The optical band gap energy was determined by spectral data of transmittance and absorbance to be 2.04eV. The electrical conductivity of grown films was measured around (1.1×10^-5Ω^-1cm^-1) at 300K. Thermoelectric power measurements of the film were carried out. Furthermore, the properties of these films are compared with properties of Cu₂O obtained by other methods.