Photoreflectance Study of GaN Films on Sapphire Substrate
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Abstract
Photoreflectance was used to study the optical properties of single crystal hexagonal GaN films on (0001) sapphire substrate grown by metalorganic chemical vapor deposition. The energy gap of GaN was determined as 3.400eV and the possible origin of the signal was discussed. Optical absorption and reflection were measured. The optical absorption edge of 3.38 eV, and the reflectivity peak at 3.3 eV confirmed the results of photoreflectance.
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QIN Lin-hong, YANG Kai, ZHENG You-dou, ZHANG Rong, DAI Xing-jiang, FENG Duan, HUANG Zhen-chun, J. C. Chen. Photoreflectance Study of GaN Films on Sapphire Substrate[J]. Chin. Phys. Lett., 1996, 13(2): 153-156.
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QIN Lin-hong, YANG Kai, ZHENG You-dou, ZHANG Rong, DAI Xing-jiang, FENG Duan, HUANG Zhen-chun, J. C. Chen. Photoreflectance Study of GaN Films on Sapphire Substrate[J]. Chin. Phys. Lett., 1996, 13(2): 153-156.
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QIN Lin-hong, YANG Kai, ZHENG You-dou, ZHANG Rong, DAI Xing-jiang, FENG Duan, HUANG Zhen-chun, J. C. Chen. Photoreflectance Study of GaN Films on Sapphire Substrate[J]. Chin. Phys. Lett., 1996, 13(2): 153-156.
|
QIN Lin-hong, YANG Kai, ZHENG You-dou, ZHANG Rong, DAI Xing-jiang, FENG Duan, HUANG Zhen-chun, J. C. Chen. Photoreflectance Study of GaN Films on Sapphire Substrate[J]. Chin. Phys. Lett., 1996, 13(2): 153-156.
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