Ultrafast Exciton Trapping Dynamics in ZnSe/(CdSe)m (ZnSe))n Short Period Superlattice Quantum Wells
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Abstract
The ultrafast exciton trapping dynamics in ZnSe/ZnCdSe short period superlattice quantum wells has been studied by using transient photoluminescence spectroscopy. A rapid exciton trapping time of less than 7ps from the barriers to the wells is measured. In Te doped samples self-trapped excitons give rise to Stokes shifted broad band luminescence and exhibit much longer lifetime.
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LIN Wei-zhu, PENG Wen-ji, XIE Cang, XU Geng, PENG Zhong-ling, YUAN Shi-xin. Ultrafast Exciton Trapping Dynamics in ZnSe/(CdSe)m (ZnSe))n Short Period Superlattice Quantum Wells[J]. Chin. Phys. Lett., 1996, 13(2): 141-144.
LIN Wei-zhu, PENG Wen-ji, XIE Cang, XU Geng, PENG Zhong-ling, YUAN Shi-xin. Ultrafast Exciton Trapping Dynamics in ZnSe/(CdSe)m (ZnSe))n Short Period Superlattice Quantum Wells[J]. Chin. Phys. Lett., 1996, 13(2): 141-144.
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LIN Wei-zhu, PENG Wen-ji, XIE Cang, XU Geng, PENG Zhong-ling, YUAN Shi-xin. Ultrafast Exciton Trapping Dynamics in ZnSe/(CdSe)m (ZnSe))n Short Period Superlattice Quantum Wells[J]. Chin. Phys. Lett., 1996, 13(2): 141-144.
LIN Wei-zhu, PENG Wen-ji, XIE Cang, XU Geng, PENG Zhong-ling, YUAN Shi-xin. Ultrafast Exciton Trapping Dynamics in ZnSe/(CdSe)m (ZnSe))n Short Period Superlattice Quantum Wells[J]. Chin. Phys. Lett., 1996, 13(2): 141-144.
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