IN SITU OBSERVATION OF THE H-INDUCED DEFECTS IN SILICON SINGLE CRYSTALS
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Abstract
The hydrogen-induced defects in FZ silicon grown in hydrogen atmosphere have been investigated by both the conventional and the in situ white beam synchrotron radiation topography. The formation process of the defects is discussed.
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MA Zhen-hong, W. Graeff. IN SITU OBSERVATION OF THE H-INDUCED DEFECTS IN SILICON SINGLE CRYSTALS[J]. Chin. Phys. Lett., 1985, 2(11): 493-496.
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MA Zhen-hong, W. Graeff. IN SITU OBSERVATION OF THE H-INDUCED DEFECTS IN SILICON SINGLE CRYSTALS[J]. Chin. Phys. Lett., 1985, 2(11): 493-496.
|
MA Zhen-hong, W. Graeff. IN SITU OBSERVATION OF THE H-INDUCED DEFECTS IN SILICON SINGLE CRYSTALS[J]. Chin. Phys. Lett., 1985, 2(11): 493-496.
|
MA Zhen-hong, W. Graeff. IN SITU OBSERVATION OF THE H-INDUCED DEFECTS IN SILICON SINGLE CRYSTALS[J]. Chin. Phys. Lett., 1985, 2(11): 493-496.
|
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