SiGe Optical Waveguide Modulators Based on the Plasma Dispersion Effect
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Abstract
Based on plasma dispersion of Si1-xGex, the single mode waveguide modulators consisting of Si1-xGex/Si and Si/ Si1-xGex/Si which were grown by molecular beam epitaxy have been fabricated. For Si1-xGex/Si structure, the switch current and insertion loss at wavelength 1.3 μm are 36 mA and 2.8 dB, respectively. The switching response time is 40 ns.
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GAO Yong, LI Guo-zheng, LIU Xi-ding, LIU En-ke, ZHANG Xiang-jiu, LU Xue-kun, WANG Xun. SiGe Optical Waveguide Modulators Based on the Plasma Dispersion Effect[J]. Chin. Phys. Lett., 1996, 13(3): 189-191.
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GAO Yong, LI Guo-zheng, LIU Xi-ding, LIU En-ke, ZHANG Xiang-jiu, LU Xue-kun, WANG Xun. SiGe Optical Waveguide Modulators Based on the Plasma Dispersion Effect[J]. Chin. Phys. Lett., 1996, 13(3): 189-191.
|
GAO Yong, LI Guo-zheng, LIU Xi-ding, LIU En-ke, ZHANG Xiang-jiu, LU Xue-kun, WANG Xun. SiGe Optical Waveguide Modulators Based on the Plasma Dispersion Effect[J]. Chin. Phys. Lett., 1996, 13(3): 189-191.
|
GAO Yong, LI Guo-zheng, LIU Xi-ding, LIU En-ke, ZHANG Xiang-jiu, LU Xue-kun, WANG Xun. SiGe Optical Waveguide Modulators Based on the Plasma Dispersion Effect[J]. Chin. Phys. Lett., 1996, 13(3): 189-191.
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