Femtosecond Reflections of Bulk GaAs and GaAs/AlGaAs Multiple Quantum Wells

  • We present room temperature femtosecond reflection studies on the photocarrier dynamics of GaAs and GaAs/AlGaAs multiple quantum wells (MQW). A rising wing with a time constant of about 5ps and an increased amplitude per carrier is observed for the MQW sample at carrier densities lower than 5 x 1011cm-2. This phenomenon is explained as the saturation of the excitonic transitions.

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