Femtosecond Reflections of Bulk GaAs and GaAs/AlGaAs Multiple Quantum Wells
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Abstract
We present room temperature femtosecond reflection studies on the photocarrier dynamics of GaAs and GaAs/AlGaAs multiple quantum wells (MQW). A rising wing with a time constant of about 5ps and an increased amplitude per carrier is observed for the MQW sample at carrier densities lower than 5 x 1011cm-2. This phenomenon is explained as the saturation of the excitonic transitions.
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LI Wei-liang, QIU Zhi-ren, PENG Wen-ji, HUANG Xu-guang, ZHOU Jian-ying, YU Zhen-xin. Femtosecond Reflections of Bulk GaAs and GaAs/AlGaAs Multiple Quantum Wells[J]. Chin. Phys. Lett., 1996, 13(3): 237-240.
LI Wei-liang, QIU Zhi-ren, PENG Wen-ji, HUANG Xu-guang, ZHOU Jian-ying, YU Zhen-xin. Femtosecond Reflections of Bulk GaAs and GaAs/AlGaAs Multiple Quantum Wells[J]. Chin. Phys. Lett., 1996, 13(3): 237-240.
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LI Wei-liang, QIU Zhi-ren, PENG Wen-ji, HUANG Xu-guang, ZHOU Jian-ying, YU Zhen-xin. Femtosecond Reflections of Bulk GaAs and GaAs/AlGaAs Multiple Quantum Wells[J]. Chin. Phys. Lett., 1996, 13(3): 237-240.
LI Wei-liang, QIU Zhi-ren, PENG Wen-ji, HUANG Xu-guang, ZHOU Jian-ying, YU Zhen-xin. Femtosecond Reflections of Bulk GaAs and GaAs/AlGaAs Multiple Quantum Wells[J]. Chin. Phys. Lett., 1996, 13(3): 237-240.
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