PHOTOLUMINESCENCE STUDIES OF GaAs-GaAlAs MULTIPLE QUANTUM WELLS
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Abstract
Photoluminescence experiments have been performed on GaAg-GaAlAs. quantum well structures with well widths ranging from 40Å to 145Å. Both the intrinsic and extrinsic transitions have been observed. Relatively strong interface-related luminescence is believed to be due to the presence of more trapped impurities at the interfaces.
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XU Zhong-ying, XU Ji-zong, CHEN Zong-gui, ZHUANG Wei-hua, XU Jun-ying, ZHENG Bao-zhen, TENG Da, LI Yu-zhang. PHOTOLUMINESCENCE STUDIES OF GaAs-GaAlAs MULTIPLE QUANTUM WELLS[J]. Chin. Phys. Lett., 1985, 2(12): 529-532.
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XU Zhong-ying, XU Ji-zong, CHEN Zong-gui, ZHUANG Wei-hua, XU Jun-ying, ZHENG Bao-zhen, TENG Da, LI Yu-zhang. PHOTOLUMINESCENCE STUDIES OF GaAs-GaAlAs MULTIPLE QUANTUM WELLS[J]. Chin. Phys. Lett., 1985, 2(12): 529-532.
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XU Zhong-ying, XU Ji-zong, CHEN Zong-gui, ZHUANG Wei-hua, XU Jun-ying, ZHENG Bao-zhen, TENG Da, LI Yu-zhang. PHOTOLUMINESCENCE STUDIES OF GaAs-GaAlAs MULTIPLE QUANTUM WELLS[J]. Chin. Phys. Lett., 1985, 2(12): 529-532.
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XU Zhong-ying, XU Ji-zong, CHEN Zong-gui, ZHUANG Wei-hua, XU Jun-ying, ZHENG Bao-zhen, TENG Da, LI Yu-zhang. PHOTOLUMINESCENCE STUDIES OF GaAs-GaAlAs MULTIPLE QUANTUM WELLS[J]. Chin. Phys. Lett., 1985, 2(12): 529-532.
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