High Speed 2×2 Optical Switch in Silicon-on-Insulator Based on Plasma Dispersion Effect
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Abstract
Based on free carrier plasma dispersion effect, a 2×2 optical switch is fabricated in a silicon-on insulator substrate by inductively coupled-plasma technology and ion implantation. The device has a Mach--Zehnder interferometer structure, in which two directional couplers serve as the power splitter and combiner. The switch presents an insertion loss of 3.04dB and a response time of 496ns.
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SUN Fei, YU Jin-Zhong, CHEN Shao-Wu. High Speed 2×2 Optical Switch in Silicon-on-Insulator Based on Plasma Dispersion Effect[J]. Chin. Phys. Lett., 2005, 22(12): 3097-3099.
SUN Fei, YU Jin-Zhong, CHEN Shao-Wu. High Speed 2×2 Optical Switch in Silicon-on-Insulator Based on Plasma Dispersion Effect[J]. Chin. Phys. Lett., 2005, 22(12): 3097-3099.
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SUN Fei, YU Jin-Zhong, CHEN Shao-Wu. High Speed 2×2 Optical Switch in Silicon-on-Insulator Based on Plasma Dispersion Effect[J]. Chin. Phys. Lett., 2005, 22(12): 3097-3099.
SUN Fei, YU Jin-Zhong, CHEN Shao-Wu. High Speed 2×2 Optical Switch in Silicon-on-Insulator Based on Plasma Dispersion Effect[J]. Chin. Phys. Lett., 2005, 22(12): 3097-3099.
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