Trapping Effects in CdSiO₃:In³⁺ Long Afterglow Phosphor

Trapping effects in CdSiO₃:In³⁺ long afterglow phosphor based on photoluminescence (PL) and thermoluminescence (TL) curves are studied. The results of TL show that two intrinsic defects associated with peaks at 346 and 418K appear in the undoped CdSiO₃ phosphor; whereas only one strong cadmium vacancy V_Cd'' defect associated with peak at 348K appears in the Cd_1-xIn_xSiO₃ phosphor due to the chemical nonequivalent substitutions of Cd²⁺ ions by In³⁺ ions. This chemical nonequivalent substitution of In³⁺ ions into the CdSiO₃ host produced the highly dense cadmium vacancy V_Cd'' trap level at 348K, which resulted in the origin of the long afterglow phenomenon. The findings has enlarged the family of non-rare-earth doped long afterglow phosphors available, and offers a promising approach for searching long afterglow phosphor.