Thermal Annealing of Si⁺ Implanted Chemical Vapor Deposition SiO₂

Ion implantation was used to bring silicon atoms into chemical vapor deposition SiO₂. Two bands of photoluminescence spectra at about 540 and 640 nm were observed from the as-prepared samples. Thermal annealing behavior of the photoluminescence was studied The possible origin of the photoluminescence is discussed.