Preparation and Microstructure of Nanosized GaN Crystals

Gallium nitride crystals in nano-scale have been fabricated by dc arc plasma method using gallium and N₂ +NH₃ as starting materials. Transmission electron microscope, selected area diffraction and x-ray diffraction investigation of the as-grown GaN crystals show that the well faceted crystals are single crystalline GaN in wurtzite structure having lattice constants a₀ = 3.18 Å and c₀ = 5.18 Å.