Electrical Characteristics of Metal Contacts to Boron DopedPolycrystalline Semiconducting Diamond Thin Films

Low resistance ohmic contacts have been fabricated on chemical vapor deposition grown polycrystalline B doped semiconducting diamond thin films by thermally activated solid state reaction process. A bilayer metallization of Ti/Au was employed. After annealing at 820°C for 10min in Ar atmosphere, the specific contact resistance of 2 x 10^-4 Ω.cm² has been obtained. The properties of the diamond/Ti interfaces have been characterized by using x-rays diffraction and scanning electron microscopy. The performance of semiconducting diamond thin film thermistors has been reported.