THE ELIMINATION OF In ISLANDS ON InP SURFACES AND ITS MECHANISM
-
Abstract
The surface indium islands originated by argon ion bombardment can be removed by evaporating phosphorous on InP surface followed by annealing. A possible mechanism of elimination of In islands is proposed based on the experimental ELS and XPS data.
Article Text
-
-
-
About This Article
Cite this article:
JIN Xiao-feng, YU Ming-ren, WANG Xun. THE ELIMINATION OF In ISLANDS ON InP SURFACES AND ITS MECHANISM[J]. Chin. Phys. Lett., 1985, 2(8): 345-348.
|
JIN Xiao-feng, YU Ming-ren, WANG Xun. THE ELIMINATION OF In ISLANDS ON InP SURFACES AND ITS MECHANISM[J]. Chin. Phys. Lett., 1985, 2(8): 345-348.
|
JIN Xiao-feng, YU Ming-ren, WANG Xun. THE ELIMINATION OF In ISLANDS ON InP SURFACES AND ITS MECHANISM[J]. Chin. Phys. Lett., 1985, 2(8): 345-348.
|
JIN Xiao-feng, YU Ming-ren, WANG Xun. THE ELIMINATION OF In ISLANDS ON InP SURFACES AND ITS MECHANISM[J]. Chin. Phys. Lett., 1985, 2(8): 345-348.
|
DownLoad: