Very Low Pressure Nucleation of Diamond on Mirror-Smooth Silicon in Hot Filament Chemical Vapor Deposition System

Under very low pressure (0.1 Torr) the high density nucleation of diamond on mirror-smooth silicon in hot filament-chemical vapor deposition system was obtained. The nucleation density of order of 10¹⁰-10¹¹cm^-2 was achieved, the same achievement which obtained in microwave plasma-chemical vapor deposition system with negative bias. In this paper the nucleation technique and the effect of low pressure on diamond nucleation were discussed in detail based on the molecular dynamics.