Quantum Confinement in GaAs Microcrystallites Embedded in SiO₂ Thin Film

Semiconductor GaAs microcrystallites were embedded in SiO₂ thin films by magnetron rf cosputtering technique. Structures of the thin films were characterized by transmission electron microscopy, x-ray diffraction and x-ray photoelectron microscopy. Average size of microcrystallites, depending on the substrate temperature during deposition, is 3-10nm. Absorption spectra of the films were measured. Blue shift of absorption edge was observed and discussed according to quantum confinement effect.