Ion-Beam Bombarding Effects on Deposition of Carbon Nitride Films by Laser Ablation

In order to obtain high quality carbon nitride films, x-ray photoelectron spectroscopy and Raman spectrum were used to analyze several kinds of film: (a) laser-ablated amorphous carbon (a-C) films, (b) a-C films after a 1 keV nitrbgen ion beam bombardment. (c) carbon nitride (CN_x) films synthesized by ablation assisted with ion beam bombardment, (d) CN_x films after a 50eV nitrogen ion beam bombardment, and (e) CN_x films after a 1 keV nitrogen ion beam bombardment. The comparison among these films showed that the concurrent deposition of CN_x films by ablation and a nitrogen ion beam should be better than the post-treatment of a-C films by nitrogen ion beam bombardment. In the case of concurrent deposited CN_x films, a post-treatment by a nitrogen ion beam bombardment with an appropriate energy (possibly less than 1 keV) was proposed to improve the ratio of C-N binding structures in the deposited films.