Influence of Annealing on Crystal Structure and Properties of SrBi₂Ta₂O₉ Thin Films Prepared by Pulse Laser Deposition

The perovskite-like SrBi₂Ta₂O₉ (SBT) thin films have been fabricated on Si/SiO₂/Ti/Pt substrate by pulse laser deposition. The crystallization and ferroelectric property were clearly dependent on the annealing time and temperature. The SBT thin film with fine grain size and well-saturated square hysteresis loop was obtained after annealing at 750°C for 90min. Good ferroelectric properties were obtained from the SBT film annealed under this condition; P_r and E_c were 8.4μC/cm² and 57kV/cm, respectively.